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Advances in Non volatile Memory and Storage Technology


Advances in Non volatile Memory and Storage Technology
  • Author : Yoshio Nishi
  • Publisher : Woodhead Publishing
  • Release : 2019-06-15
  • ISBN : 9780081025857
  • Language : En, Es, Fr & De
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Advances in Nonvolatile Memory and Storage Technology, Second Edition, addresses recent developments in the non-volatile memory spectrum, from fundamental understanding, to technological aspects. The book provides up-to-date information on the current memory technologies as related by leading experts in both academia and industry. To reflect the rapidly changing field, many new chapters have been included to feature the latest in RRAM technology, STT-RAM, memristors and more. The new edition describes the emerging technologies including oxide-based ferroelectric memories, MRAM technologies, and 3D memory. Finally, to further widen the discussion on the applications space, neuromorphic computing aspects have been included. This book is a key resource for postgraduate students and academic researchers in physics, materials science and electrical engineering. In addition, it will be a valuable tool for research and development managers concerned with electronics, semiconductors, nanotechnology, solid-state memories, magnetic materials, organic materials and portable electronic devices. Discusses emerging devices and research trends, such as neuromorphic computing and oxide-based ferroelectric memories Provides an overview on developing nonvolatile memory and storage technologies and explores their strengths and weaknesses Examines improvements to flash technology, charge trapping and resistive random access memory

Physics of Carbonyl Doped Transition Metal Oxides for a Non volatile Memory


Physics of Carbonyl Doped Transition Metal Oxides for a Non volatile Memory
  • Author : Seth Christopher Shoemaker
  • Publisher :
  • Release : 2019
  • ISBN : OCLC:1127912246
  • Language : En, Es, Fr & De
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This thesis reviews the current state of technologies used in non-volatile memory and the limitations these technologies create for memory and CPU systems. A detailed review and analysis of the physics found in electron-electron interactions in doped transition metal oxides is then provided. This analysis serves as the basis for analyzing CeRAM; a technology that relies on electron-electron interactions that has the potential to serve as a replacement for current memory systems.

Investigation of Metal Oxide Dielectrics for Non volatile Floating Gate and Resistance Switching Memory Applications


Investigation of Metal Oxide Dielectrics for Non volatile Floating Gate and Resistance Switching Memory Applications
  • Author : Bhaswar Chakrabarti
  • Publisher :
  • Release : 2014
  • ISBN : OCLC:886683738
  • Language : En, Es, Fr & De
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Floating gate transistor based flash memories have seen more than a decade of continuous growth as the prominent non-volatile memory technology. However, the recent trends indicate that the scaling of flash memory is expected to saturate in the near future. Several alternative technologies are being considered for the replacement of flash in the near future. The basic motivation for this work is to investigate the material properties of metal oxide based high-k dielectrics for potential applications in floating gate and resistance switching memory applications. This dissertation can be divided into two main sections. In the first section, the tunneling characteristics of the SiO 2 /HfO 2 stacks were investigated. Previous theoretical studies for thin SiO 2 / thick high-k stacks predict an increase in tunneling current in the high-bias regime (better programming) and a decrease in the low-bias regime (better retention) in comparison to pure SiO2 of same equivalent oxide thickness (EOT). However, our studies indicated that the performance improvement in SiO2 /HfO2 stacks with thick HfO2 layer is difficult due to significant amount of charge traps in thick HfO2 layers. Oxygen anneal on the stacks did not improve the programming current and retention. X-ray photoelectron spectroscopy (XPS) studies indicated that this was due to formation of an interfacial oxide layer. The second part of the dissertation deals with the investigation of resistive switching in metal oxides. Although promising, practical applications of resistive random access memories (RRAM) require addressing several issues including high forming voltage, large operating currents and reliability. We first investigated resistive switching in HfTiO x nanolaminate with conventional TiN electrodes. The forming-free switching observed in the structures could be described by the quantum point contact model. The modelling results indicated that the forming-free characteristics can be due to a higher number of filaments in comparison to a device that requires forming. Forming-free resistive switching with low current operation in graphene-insulator-graphene structures was also investigated. Electrical as well as Raman and XPS analysis indicated that low current operation is due to the migration and subsequent physisorption of oxygen ions on the graphene surface during the set operation. A statistical model was also developed for quantitative prediction of the effect of noise on RRAM characteristics.

Advances in Non volatile Memory and Storage Technology


Advances in Non volatile Memory and Storage Technology
  • Author : Yoshio Nishi
  • Publisher : Elsevier
  • Release : 2014-06-24
  • ISBN : 9780857098092
  • Language : En, Es, Fr & De
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New solutions are needed for future scaling down of nonvolatile memory. Advances in Non-volatile Memory and Storage Technology provides an overview of developing technologies and explores their strengths and weaknesses. After an overview of the current market, part one introduces improvements in flash technologies, including developments in 3D NAND flash technologies and flash memory for ultra-high density storage devices. Part two looks at the advantages of designing phase change memory and resistive random access memory technologies. It looks in particular at the fabrication, properties, and performance of nanowire phase change memory technologies. Later chapters also consider modeling of both metal oxide and resistive random access memory switching mechanisms, as well as conductive bridge random access memory technologies. Finally, part three looks to the future of alternative technologies. The areas covered include molecular, polymer, and hybrid organic memory devices, and a variety of random access memory devices such as nano-electromechanical, ferroelectric, and spin-transfer-torque magnetoresistive devices. Advances in Non-volatile Memory and Storage Technology is a key resource for postgraduate students and academic researchers in physics, materials science, and electrical engineering. It is a valuable tool for research and development managers concerned with electronics, semiconductors, nanotechnology, solid-state memories, magnetic materials, organic materials, and portable electronic devices. Provides an overview of developing nonvolatile memory and storage technologies and explores their strengths and weaknesses Examines improvements to flash technology, charge trapping, and resistive random access memory Discusses emerging devices such as those based on polymer and molecular electronics, and nanoelectromechanical random access memory (RAM)

Photo Electroactive Non Volatile Memories for Data Storage and Neuromorphic Computing


Photo Electroactive Non Volatile Memories for Data Storage and Neuromorphic Computing
  • Author : Su-Ting Han
  • Publisher : Woodhead Publishing
  • Release : 2020-05-26
  • ISBN : 9780128226063
  • Language : En, Es, Fr & De
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Photo-Electroactive Non-Volatile Memories for Data Storage and Neuromorphic Computing summarizes advances in the development of photo-electroactive memories and neuromorphic computing systems, suggests possible solutions to the challenges of device design, and evaluates the prospects for commercial applications. Sections covers developments in electro-photoactive memory, and photonic neuromorphic and in-memory computing, including discussions on design concepts, operation principles and basic storage mechanism of optoelectronic memory devices, potential materials from organic molecules, semiconductor quantum dots to two-dimensional materials with desirable electrical and optical properties, device challenges, and possible strategies. This comprehensive, accessible and up-to-date book will be of particular interest to graduate students and researchers in solid-state electronics. It is an invaluable systematic introduction to the memory characteristics, operation principles and storage mechanisms of the latest reported electro-photoactive memory devices. Reviews the most promising materials to enable emerging computing memory and data storage devices, including one- and two-dimensional materials, metal oxides, semiconductors, organic materials, and more Discusses fundamental mechanisms and design strategies for two- and three-terminal device structures Addresses device challenges and strategies to enable translation of optical and optoelectronic technologies