Nanomaterials-Based Charge Trapping Memory Devices Books

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Nanomaterials Based Charge Trapping Memory Devices


Nanomaterials Based Charge Trapping Memory Devices
  • Author : Ammar Nayfeh
  • Publisher : Elsevier
  • Release : 2020-05-27
  • ISBN : 9780128223437
  • Language : En, Es, Fr & De
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Rising consumer demand for low power consumption electronics has generated a need for scalable and reliable memory devices with low power consumption. At present, scaling memory devices and lowering their power consumption is becoming more difficult due to unresolved challenges, such as short channel effect, Drain Induced Barrier Lowering (DIBL), and sub-surface punch-through effect, all of which cause high leakage currents. As a result, the introduction of different memory architectures or materials is crucial. Nanomaterials-based Charge Trapping Memory Devices provides a detailed explanation of memory device operation and an in-depth analysis of the requirements of future scalable and low powered memory devices in terms of new materials properties. The book presents techniques to fabricate nanomaterials with the desired properties. Finally, the book highlights the effect of incorporating such nanomaterials in memory devices. This book is an important reference for materials scientists and engineers, who are looking to develop low-powered solutions to meet the growing demand for consumer electronic products and devices. Explores in depth memory device operation, requirements and challenges Presents fabrication methods and characterization results of new nanomaterials using techniques, including laser ablation of nanoparticles, ALD growth of nano-islands, and agglomeration-based technique of nanoparticles Demonstrates how nanomaterials affect the performance of memory devices

Nanomaterials Based Charge Trapping Memory Devices


Nanomaterials Based Charge Trapping Memory Devices
  • Author : Ammar Nayfeh
  • Publisher : Elsevier
  • Release : 2020-07-10
  • ISBN : 9780128223420
  • Language : En, Es, Fr & De
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Rising consumer demand for low power consumption electronics has generated a need for scalable and reliable memory devices with low power consumption. At present, scaling memory devices and lowering their power consumption is becoming more difficult due to unresolved challenges, such as short channel effect, Drain Induced Barrier Lowering (DIBL), and sub-surface punch-through effect, all of which cause high leakage currents. As a result, the introduction of different memory architectures or materials is crucial. Nanomaterials-based Charge Trapping Memory Devices provides a detailed explanation of memory device operation and an in-depth analysis of the requirements of future scalable and low powered memory devices in terms of new materials properties. The book presents techniques to fabricate nanomaterials with the desired properties. Finally, the book highlights the effect of incorporating such nanomaterials in memory devices. This book is an important reference for materials scientists and engineers, who are looking to develop low-powered solutions to meet the growing demand for consumer electronic products and devices. Explores in depth memory device operation, requirements and challenges Presents fabrication methods and characterization results of new nanomaterials using techniques, including laser ablation of nanoparticles, ALD growth of nano-islands, and agglomeration-based technique of nanoparticles Demonstrates how nanomaterials affect the performance of memory devices

Charge Trapping Non Volatile Memories


Charge Trapping Non Volatile Memories
  • Author : Panagiotis Dimitrakis
  • Publisher : Springer
  • Release : 2015-08-05
  • ISBN : 9783319152905
  • Language : En, Es, Fr & De
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This book describes the basic technologies and operation principles of charge-trapping non-volatile memories. The authors explain the device physics of each device architecture and provide a concrete description of the materials involved as well as the fundamental properties of the technology. Modern material properties used as charge-trapping layers, for new applications are introduced.

Advances in Non volatile Memory and Storage Technology


Advances in Non volatile Memory and Storage Technology
  • Author : Yoshio Nishi
  • Publisher : Elsevier
  • Release : 2014-06-24
  • ISBN : 9780857098092
  • Language : En, Es, Fr & De
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New solutions are needed for future scaling down of nonvolatile memory. Advances in Non-volatile Memory and Storage Technology provides an overview of developing technologies and explores their strengths and weaknesses. After an overview of the current market, part one introduces improvements in flash technologies, including developments in 3D NAND flash technologies and flash memory for ultra-high density storage devices. Part two looks at the advantages of designing phase change memory and resistive random access memory technologies. It looks in particular at the fabrication, properties, and performance of nanowire phase change memory technologies. Later chapters also consider modeling of both metal oxide and resistive random access memory switching mechanisms, as well as conductive bridge random access memory technologies. Finally, part three looks to the future of alternative technologies. The areas covered include molecular, polymer, and hybrid organic memory devices, and a variety of random access memory devices such as nano-electromechanical, ferroelectric, and spin-transfer-torque magnetoresistive devices. Advances in Non-volatile Memory and Storage Technology is a key resource for postgraduate students and academic researchers in physics, materials science, and electrical engineering. It is a valuable tool for research and development managers concerned with electronics, semiconductors, nanotechnology, solid-state memories, magnetic materials, organic materials, and portable electronic devices. Provides an overview of developing nonvolatile memory and storage technologies and explores their strengths and weaknesses Examines improvements to flash technology, charge trapping, and resistive random access memory Discusses emerging devices such as those based on polymer and molecular electronics, and nanoelectromechanical random access memory (RAM)

State of the Art Program on Compound Semiconductors 56 SOTAPOCS 56


State of the Art Program on Compound Semiconductors 56  SOTAPOCS 56
  • Author : J.-H. He
  • Publisher : The Electrochemical Society
  • Release : 2014
  • ISBN : 9781607685548
  • Language : En, Es, Fr & De
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